J Am Ceram Soc 1982,65(12):199–201.CrossRef 13. Park HK, Moon YT, Kim DK, Kim CH: Formation of monodisperse spherical TiO 2 powders by thermal hydrolysis of Ti (SO 4 ) 2 . J Am Ceram Soc 1996,79(10):2727–2732.CrossRef 14. Chen Z, Wang C, Zhou H, Sang L, Li X: Modulation of calcium oxalate crystallization by commonly consumed green tea. Cryst Eng Comm 2010,12(3):845–852. 10.1039/b913589hCrossRef

15. Chen Z-H, Ren X-L, Zhou H-H, Li X-D: The role of hyaluronic acid in biomineralization. Front Mater Sci 2012,6(4):283–296. 10.1007/s11706-012-0182-4CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions JY, YE, LC, JZ, and YS took the tasks of experimental, data collection, and draft writing; ZC gave his contributions click here on the experimental design and guidance, data analysis, as well as the main paper organization; and YZ took the contributions on the research guidance, discussion, and paper modification. All authors read and approved the final manuscript.”
“Background Epoxomicin order As the shrinking of devices continues, conventional metal-oxide-semiconductor field-effect transistor (MOSFET) will reach the dimension limitation because of excessive gate leakage current, which would result in an increase in static power consumption and error read in logic device [1]. In addition, since the distance needed to obtain full bandgap SiO2 at each interface is about 3.5 ~ 4 Å, thickness of 8 Å

is required for a perfect dielectric [2, 3]. Under the situation, it is expected that the physical limited thickness for SiO2 is about 8 Å. Moreover, because the dimension of device decreases either more rapidly in comparison with operating voltage, electric field applied upon the gate dielectric would increase more quickly. Therefore, severe phonon scattering and downgraded

channel mobility would happen since channel carriers would be attracted towards the dielectric interface. The study of Timp et al. [4] revealed that the drive AC220 current of device would decrease while SiO2 thickness is less than 13 Å. An obvious solution to the above problem is achieved by applying material with higher permittivity (high-κ) than SiO2, since it could not only suppress the gate leakage current but also maintain the same oxide capacitance. Numerous studies of high-κ materials such as HfO2, HfSiON, Al2O3, ZrO2, Ta2O5, TiO2, Y2O3, SrTiO3 (STO), and BaSrTiO3 (BST) were proposed as potential candidates for replacing SiO2. However, materials with merely medium permittivity of κ < 10 [5, 6] would not achieve significant advantage over SiO2 when the dielectric becomes thinner. In addition, high-κ materials such as Ta2O5 and TiO2 [7] would result in thermal instability while contact directly to Si. While for the STO and BST, some reports revealed that the high dielectric constant would result in fringing field-induced barrier-lowering effect and would cause a short channel effect [8].