2 eV [17, 24] and if it is possible to obtain a p-type ZnO by thermal oxidation of the n-type Zn3N2 NWs Paclitaxel which would be important for device applications. Conclusion Zn3N2 NWs with
diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3 between 500°C and 600°C under a steady gas flow of NH3 containing H2. These exhibited a large optical band gap of 3.2 eV determined from absorption-transmission steady state spectroscopy. The surface oxidation of Zn3N2 is expected to lead to the formation of a Zn3N2/ZnO core-shell NW, the energy band diagram of which was calculated via the self-consistent solution of the Poisson-Schrödinger equations within the effective mass approximation by taking into account a fundamental energy band gap of 1.2 eV for Zn3N2. Uniform Zn3N2 layers were obtained on Au/Si(001), while no deposition took place on plain Si(001), in contrast to the case of ZnO NWs which grow with or without a catalyst on Si(001) via the reaction of Zn with O2. References 1. Othonos A, Zervos M, Pervolaraki M: Ultra fast carrier relaxation of InN nanowires grown by reactive vapor transport. Nanoscale Res Lett 2009, 4:122.CrossRef
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